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PDF 2SK2957 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2957 | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2957 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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2SK2957(L),2SK2957(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 7mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
LDPAK
G
D
S
ADE-208-567D (Z)
5th. Edition
Jun 1998
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
1 page  
2SK2957(L),2SK2957(S)
Body–Drain Diode Reverse
Recovery Time
100
50
20
10
5
2 di / dt = 50 A / µs
1
0.1 0.3
VGS = 0, Ta = 25 °C
1 3 10 30 100
Reverse Drain Current I DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
300 VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
I D = 50 A
40
20
16
30 VDS
20
VGS
VDD = 5 V
10 V
25 V
12
8
10 VDD = 25 V
10 V
4
5V 0
0 20 40 60 80 100
Gate Charge Qg (nc)
1000
500
200
100
50
Switching Characteristics
VGS = 10 V, V DD = 10 V
PW = 5 µs, duty < 1 %
t d(off)
tf
tr
t d(on)
20
10
0.1 0.2 0.5 1 2 5 10 20
Drain Current I D (A)
50
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 2SK2957.PDF ] | |
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