(PDF) 2SK2939 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK2939
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2939(L),2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline ADE-208-562D (Z) 5th. Edition Jun 1998 LDPAK D 44 G S 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 1 page 2SK2939(L),2SK2939(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Pulse Test 0.8 0.6 I D = 20A 0.4 10 A 0.2 5A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 0.05 VGS = 4 V 10 V 0.02 0.01 0.1 0.3 1 3 10 30 100 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 0.06 20 A 0.04 V GS = 4 V 5,10 A 0.02 0 –40 5, 10,20 A 10 V 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 50 20 Tc = –25 °C 25 °C 10 75 °C 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) 5 5 Page

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PDF 2SK2939 Data sheet ( Hoja de datos )