(PDF) 2SK2925S Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK2925S
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline ADE-208-549C (Z) 4th. Edition Jun 1998 DPAK–2 44 D G S 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 1 page 2SK2925(L),2SK2925(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Pulse Test 1.6 1.2 0.8 I D = 10 A 0.4 5 A 2A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 0.1 0.05 VGS = 4 V 10 V 0.02 0.01 1 2 5 10 20 50 100 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 0.3 I D = 10 A 5 A 2 A 0.2 V GS = 4 V 0.1 0 10 V 10 A 2, 5 A –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 20 10 Tc = –25 °C 5 25 °C 2 75 °C 1 V DS = 10 V 0.5 Pulse Test 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 5 5 Page

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PDF 2SK2925S Data sheet ( Hoja de datos )