|
|
PDF 2SK2515 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2515 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK2515 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2515
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2515 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super Low On-Resistance
RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A)
RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 3 400 pF TYP.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID (DC)
±50
A
Drain Current (pulse)*
ID (pulse) ±200
A
Total Power Dissipation (Tc = 25 ˚C) PT1 150 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4
4.7 MAX.
1.5
123
2.2±0.2
5.45
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the transis-
tor serves as a protector against ESD. When this device is
actually used, an additional protection circuit is externally re-
quired if a voltage exceeding the rated voltage may be applied
to this device.
Document No. D10301EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15 VGS = 4 V
10
VGS = 10 V
5
0 ID = 25 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
100 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
10 000
1 000
Crss
Ciss
Coss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100A/ µ s
VGS = 0
100
10
1.0
0.1
1.0 10
ID - Drain Current - A
100
2SK2515
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
4V
1
VGS = 0
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
td(on)
10
1.0
0.1
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 VDD = 48 V 16
ID = 50 A 14
60 12
VDS
40
10
VGS
8
6
20 4
2
0
0 50 100 150 200
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2515.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK2510 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| 2SK2511 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| 2SK2512 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| 2SK2514 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |