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PDF 2SK2512 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2512 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2512
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A)
RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A)
• Low Ciss Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±45
A
Drain Current (pulse)*
ID(pulse) ±180
A
Total Power Dissipation (Tc = 25 ˚C)
PT1 35 W
Total Power Dissipation (TA = 25 ˚C)
PT2 2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Gate
Body
Diode
Gate
Protection
Diode
Source
Document No. D10291EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
VGS = 4 V
20
VGS = 10 V
10
0 ID = 23 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
100 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
10 000
1 000
Ciss
Coss
100
0.1
Crss
1 10
VDS - Drain to Source Voltage - V
100
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0
100
10
1
0.1
1.0 10
ID - Drain Current - A
100
2SK2512
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1 VGS = 0 V
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
100
10
SWITCHING CHARACTERISTICS
td(off)
tf
tr
td(on)
1.0
0.1
VDD = 30 V
VGS = 10 V
RG =10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
ID = 45 A
14
60
VDS
VDD = 12 V
30 V
40 48 V
VGS
12
10
8
6
20 4
2
0
0 40 80 120 160
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2512.PDF ] | |
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