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PDF 2SK2483 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2483 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2483
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2483 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
RDS (on) = 2.8 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 1 200 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±3.5
A
Drain Current (pulse)*
ID(pulse) ±10.5
A
Total Power Dissipation (Tc = 25 ˚C)
PT1 40 W
Total Power Dissipation (TA = 25 ˚C)
PT2 2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 3.5 A
Single Avalanche Energy**
EAS 147 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, R G = 25 Ω, VGS = 20 V → 0
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. D10275EJ1V0DS00 (1st edition)
Date Published September 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
ID = 3 A
2A
3
2
1
VGS = 10 V
Pulsed
–50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
100 Coss
10
0.1
Crss
1 10
VDS - Drain to Source Voltage - V
100
2SK2483
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1 VGS = 10 V
0.1
0
VGS = 0 V
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
SWITCHING CHARACTERISTICS
1 000
100
10
1.0
0.1
tr
tf
td(off)
td(on)
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
10
0.1
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
ID = 3.5 A
14
12
10
VDD = 450 V
300 V
8 150 V
6
4
2
0 10 20 30 40
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2483.PDF ] | |
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