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What is 2SK2481?

This electronic component, produced by the manufacturer "NEC", performs the same function as "SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE".


2SK2481 Datasheet PDF - NEC

Part Number 2SK2481
Description SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2481
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2481 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
Low On-Resistance
RDS(on) = 4.0 (VGS = 10 V, ID = 2.0 A)
Low Ciss Ciss = 900 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 900 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.0
A
Drain Current (pulse)*
ID(pulse) ±12
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
70 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 4.0 A
Single Avalanche Energy**
EAS 65.9 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
Drain
Gate
Body
Diode
Source
Document No. D10273EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
© 1995

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2SK2481 equivalent
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
VGS = 10 V
0 ID = 2 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
100
10
1.0
Coss
Crss
10 100 1000
VDS - Drain to Source Voltage - V
2SK2481
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1
0.1
0
1 000
VGS = 10 V
VGS = 0 V
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(off)
tr
td(on)
tf
VDD = 150 V
VGS = 10 V
RG =10
1.0 10 100
ID - Drain Current - A
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
10
0.1
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
ID = 4.0 A
14
12
VDD = 450 V
10 300 V
150 V
8
6
4
2
0
4 8 12 16 20 24 28 32
Qg - Gate Charge - nC
5


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2SK2481 datasheet


1. 4A, N-Ch, MOSFET - NEC

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2SK2481The function is SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE. NECNEC

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