2SK2413 Datasheet PDF - NEC
Part Number | 2SK2413 | |
Description | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
Manufacturers | NEC | |
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MOS FIELD EFFECT TRANSISTOR
2SK2413
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2413 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 860 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
8.0 ±0.2
4.5 ±0.2
1 23
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±10 A
Drain Current (pulse)*
ID(pulse)
±40 A
Total Power Dissipation (TA = 25 ˚C) PT
1.8 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
10 A
Single Avalanche Energy**
EAS
10 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
1.4 ±0.2
1.4 ±0.2
0.5 ±0.1
0.5 ±0.1 0.5 ±0.1
1. Gate
2. Drain
3. Source
MP-10 (ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. TC-2494
(O. D. No. TC-8032)
Date Published November 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
|
|
2SK2413
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a) = 69.4 ˚C/W
10
1
0.1
0.01
10 µ
100 µ 1 m 10 m 100 m 1
PW - Pulse Width - s
Single Pulse
10 100 1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
10
1
1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
160 Pulsed
140
120
100
80 VGS = 4 V
60
40 VGS = 10 V
20
0
1
10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
120
Pulsed
100
80
60
ID = 5 A
40
20
0
0
10
VGS - Gate to Source Voltage - V
20
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0 VDS = 10 V
ID = 1 mA
1.5
1.0
0.5
0
–50
0 50 100
Tch - Channel Temperature - ˚C
150
5
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