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PDF 2SK2358 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2358 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2357/2SK2358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A)
2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2357/2358) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±6.0
A
Drain Current (pulse)*
ID(pulse) ±24
A
Total Power Dissipation (Tc = 25 ˚C)
PT1 35 W
Total Power Dissipation (Ta = 25 ˚C)
PT2 2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current**
IAS 6.0 A
Single Avalanche Energy**
EAS 17 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
1 23
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
The information in this document is subject to change without notice.
Document No. D11392EJ3V0DS00 (3rd edition)
(Previous No. TC-2498)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994
1 page  
2SK2357/2SK2358
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.6
1.2 ID = 6 A
3A
0.8
0.4
VGS = 10 V
0
–50 0 50 100 150
Tch - Channel Temperature - °C
5 000
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1.0 MHz
Ciss
100
10
5
1
800
600
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/ µs
VGS = 10 V
400
200
0
1.0
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
50
Pulsed
10
1.0
10 V
VGS = 0
0.1
0.05
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td(on)
td(off)
0.5
0.1
VDD = 150 V
VGS = 10 V
RG = 25 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16
ID = 6 A
VDD = 400 V VGS
14
300
250 V
12
125 V
10
200 8
6
100
VDS
4
2
0
0 10 20 30 40
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2358.PDF ] | |
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