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PDF 2SK2225 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2225 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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2SK2225
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage (VDSS = 1500 V)
• High speed switching
• Low drive current
• No Secondary Breakdown
• Suitable for Switching regulator, DC-DC converter
Outline
TO-3PFM
ADE-208-140
1st. Edition
D
G1
2
3
1. Gate
2. Drain
3. Source
S
1 page  
5000
Body to Drain Diode Reverse
Recovery Time
2000
1000
500
di / dt = 100 A / µs, Ta = 25 °C
200 VGS = 0, Pulse Test
100
50
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I DR (A)
2SK2225
10000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
100 Coss
Crss
10
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
1000
Dynamic Input Characteristics
VDD = 250 V
800 400 V
600 V
VDS
600
VGS
20
16
12
400 8
200
VDD = 250 V
400 V
I D = 2.5 A 4
600 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
1000
500
200
Switching Characteristics
t d(off)
VGS = 10 V
PW = 2 µs
duty < 1 %
100
tf
50 t r
20 t d(on)
10
0.05 0.1 0.2 0.5 1 2
Drain Current I D (A)
5
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 2SK2225.PDF ] | |
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