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Número de pieza | 2SK1526 | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1526 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2SK1526, 2SK1527
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-3PL
D
G1
2
3
1. Gate
2. Drain
3. Source
S
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
ID = 50 A
6
4
20 A
2 10 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.5
0.4
VGS = 10 V
Pulse Test
0.3
ID = 50 A
20 A
0.2 10 A
0.1
0
–40 0
40 80 120 160
Case Temperature TC (°C)
2SK1526, 2SK1527
Static Drain to Source on State
Resistance vs. Drain Current
5
2 Pulse Test
1
0.5
0.2
VGS = 10 V, 15 V
0.1
0.05
2
5 10 20 50 100 200
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
100
VDS = 10 V
50 Pulse Test
20 TC = –25°C
25°C
10 75°C
5
2
1
0.5 1 2
5 10 20
Drain Current ID (A)
50
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SK1526.PDF ] |
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