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Número de pieza | 2SK1341 | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1341 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2SK1341
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
ID = 5 A
12
8
2A
4
1A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
10
VGS = 10 V
Pulse Test
8
6
ID = 5 A
4
2A
1A
2
0
–40
0 40 80 120
Case Temperature TC (°C)
160
2SK1341
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5 VGS = 10 V
2 15 V
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
10
–25°C
5 TC = 25°C
75°C
2
1
0.5
0.2 VDS = 20 V
Pulse Test
0.1
0.05 0.1 0.2
0.5 1
2
Drain Current ID (A)
5
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SK1341.PDF ] |
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