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What is 2SK117?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)".


2SK117 Datasheet PDF - Toshiba Semiconductor

Part Number 2SK117
Description N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK117
2SK117
Low Noise Audio Amplifier Applications
Unit: mm
High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
High breakdown voltage: VGDS = 50 V
Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
50
10
300
125
55~125
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
TO-92
temperature, etc.) may cause this product to decrease in the
JEITA
SC-43
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5F1D
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
Yfs
Ciss
Crss
NF (1)
NF (2)
VDS = 10 V, ID = 0.1 μA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VGD = −10 V, ID = 0, f = 1 MHz
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 10 Hz
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 1 kHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
⎯ ⎯ −1.0 nA
50
V
1.2 14 mA
0.2 ⎯ −1.5 V
4.0 15 mS
13 pF
3 pF
5 10
dB
1
2
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SK117 electronic component.


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