(PDF) 2SK1169 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1169
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 8 Pulse Test 6 20 A 4 10 A 2 ID = 5 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 1.0 0.8 VGS = 10 V Pulse Test 0.6 ID = 20 A 0.4 10 A 0.2 5 A 0 –40 0 40 80 120 160 Case Temperature TC (°C) 2SK1169, 2SK1170 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1.0 0.5 VGS = 10 V 0.2 15 V 0.1 0.05 1 2 5 10 20 50 100 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 50 VDS = 20 V 20 Pulse Test 10 –25°C TC = 25°C 75°C 5 2 1.0 0.5 0.2 0.5 1.0 2 5 10 20 Drain Current ID (A) 5 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet 2SK1169.PDF ]

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PDF 2SK1169 Data sheet ( Hoja de datos )