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2SK1056 Datasheet PDF - Hitachi Semiconductor

Part Number 2SK1056
Description Silicon N-Channel MOS FET
Manufacturers Hitachi Semiconductor 
Logo Hitachi Semiconductor Logo 

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2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier

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2SK1056 equivalent
Drain to Source Saturation
Voltage vs. Drain Current
10
VGD = 0
5
25°C
75°C
=
–25°C
TC
2
1.0
0.5
0.2
0.1
0.1
0.2 0.5 1.0 2
Drain Current ID (A)
5
10
1000
Input Capacitance vs. Gate
Source Voltage
500
200
100
0
VDS = 10 V
f = 1 MHz
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
2SK1056, 2SK1057, 2SK1058
Drain to Source Voltage vs.
Gate to Source Voltage
10
8 TC = 25°C
6
5A
4
2 2A
ID = 1 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Frequency
3.0
1.0
0.3
0.1
0.03
0.01
TC = 25°C
VDS = 10 V
ID = 2 A
0.003
10 k 30 k 100 k 300 k 1 M 3 M 10 M
Frequency f (Hz)
5


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