(PDF) 2SJ452 Datasheet - Silicon P-Channel MOS FET

Número de pieza	2SJ452
Descripción	Silicon P-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SJ452 Silicon P-Channel MOS FET Application Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK). Outline MPAK G 3 1 2 D 1. Source 2. Gate 3. Drain S ADE-208-383 1st. Edition 1 page 2SJ452 Typical Capacitance vs. Drain to Source Voltage 100 Switching Characteristics 20 30 Coss 10 3 Ciss 1 0.3 Crss 0.1 0.03 VGS = 0 0.01 f = 1 MHz 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) 10 t d(off) 5 tf 2 tr 1 0.5 t d(on) VGS = –10 V, V DD = –30 V 0.2 PW = 5 µs, duty < 1 % –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 Drain Current I D (A) –1 Reverse Drain Current vs. Source to Drain Voltage –0.20 Pulse Test –0.16 –0.12 –0.08 –0.04 –5 V VGS = 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 Source to Drain Voltage V SD (V) 5 5 Page

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PDF 2SJ452 Data sheet ( Hoja de datos )