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PDF 2SJ412 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ412 | |
| Descripción | Silicon P Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SJ412
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ412
DC-DC Converter, Relay Drive and Motor Drive
Applications
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
−100
−100
±20
−16
−64
60
292
−16
6
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.08
83.3
Unit
°C/W
°C/W
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 Ω, IAR = −16 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29
1 page  
2SJ412
rth – tw
3
1
Duty = 0.5
0.5
0.3 0.2
0.1
0.05
0.03
0.1
0.05
0.02
0.01
0.01
10 μ
Single pulse
100 μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.08°C/W
1m
10 m
100 m
1
Pulse width tw (s)
10
Safe Operating Area
−300
−100
−50
−30
IC max (pulsed)*
ID max (continuous)
−10
−5 DC operation
−3 Tc = 25°C
100 μs*
1 ms*
10 ms*
−1
*: Single nonrepetitive pulse
−0.5 Tc = 25°C
−0.3 Curves must be derated
linearly with increase in
temperature.
−0.1
−0.3 −1 −3 −10
VDSS max
−30 −100
Drain-source voltage VDS (V)
−300
500
400
300
200
100
0
25
EAS – Tch
50 75 100 125
Channel temperature Tch (°C)
150
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
RG = 25 Ω
VDD = −25 V, L = 1.84 mH
WAVE FORM
ΕAS
=
1·L·I2·
2
⎝⎛⎜⎜
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SJ412.PDF ] | |
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