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What is 2SD882?

This electronic component, produced by the manufacturer "NEC", performs the same function as "NPN SILICON POWER TRANSISTOR".


2SD882 Datasheet PDF - NEC

Part Number 2SD882
Description NPN SILICON POWER TRANSISTOR
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
NPN SILICON POWER TRANSISTOR
2SD882
NPN SILICON POWER TRANSISTOR
DESCRIPTION
The 2SD882 is NPN silicon transistor suited for the output stage of 3
watts audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES
Low saturation voltage
VCE(sat) = 0.5 V MAX. (IC = 2 A, IB = 0.2 A)
Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
2.8 MAX.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
Junction Temperature
Maximum Power Dissipations
55 to +150°C
150°C Maximum
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Maximum Voltages and Currents (TA = 25°C)
VCBO
Collector to Base Voltage
VCEO
Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
IC(DC)
Collector Current (DC)
IC(pulse)Note Collector Current (pulse)
Note Pulse Test PW 350 µs, Duty Cycle 2%
1.0 W
10 W
40 V
30 V
5.0 V
3.0 A
7.0 A
12 TYP.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1: Emitter
2: Collector: connected to mounting plane
3: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
DC Current Gain
hFE1
VCE = 2.0 V, IC = 20 mANote
DC Current Gain
hFE2
VCE = 2.0 V, IC = 1.0 ANote
Gain Bandwidth Product
fT VCE = 5.0 V, IC = 0.1 A
Output Capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Collector Cutoff Current
ICBO VCB = 30 V, IE = 0 A
Emitter Cutoff Current
IEBO VEB = 3.0 V, IC = 0 A
Collector Saturation Voltage
VCE(sat)
IC = 2.0 A, IB = 0.2 ANote
Base Saturation Voltage
VBE(sat)
IC = 2.0 A, IB = 0.2 ANote
Note Pulse Test: PW 350 µs, Duty Cycle 2%
MIN.
30
60
TYP.
150
160
90
45
0.3
1.0
MAX.
400
1.0
1.0
0.5
2.0
UNIT
MHz
pF
µA
µA
V
V
CLASSIFICATION OF hFE
Rank
Range
R
60 to 120
Q
100 to 200
P
160 to 320
Remark Test Conditions: VCE = 2.0 V, IC = 1.0 A
E
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17116EJ2V0DS00 (2nd edition)
(Previous No. TC-3564)
Date Published March 2004 N CP(K)
Printed in Japan
The mark shows major revised points.
c
2004


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