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What is D2012UK?

This electronic component, produced by the manufacturer "Seme LAB", performs the same function as "METAL GATE RF SILICON FET".


D2012UK Datasheet PDF - Seme LAB

Part Number D2012UK
Description METAL GATE RF SILICON FET
Manufacturers Seme LAB 
Logo Seme LAB Logo 


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Total 4 Pages



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No Preview Available ! D2012UK datasheet, circuit

MECHANICAL DATA
C
2
1
A
3
F
(2 pls)
H
J
N
(typ)
B
D
(2 pls)
MI
PIN 1
PIN 3
SOURCE
GATE
E KG
DP
PIN 2 DRAIN
DIM mm
A 16.51
B 6.35
C 45°
D 3.30
E 18.92
F 1.52
G 2.16
H 14.22
I 1.52
J 6.35
K 0.13
M 5.08
N 1.27 x 45°
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5° 45° 5°
0.13 0.130 0.005
0.08 0.745 0.003
0.13 0.060 0.005
0.13 0.085 0.005
0.08 0.560 0.003
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.200 0.020
0.13 0.050 x 45° 0.005
TetraFET
D2012UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 50 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
42W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
4A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 12/00


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for D2012UK electronic component.


Information Total 4 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
D2012UKThe function is METAL GATE RF SILICON FET. Seme LABSeme LAB

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