D1018 Datasheet PDF - Seme LAB
Part Number | D1018 | |
Description | METAL GATE RF SILICON FET | |
Manufacturers | Seme LAB | |
Logo | ||
There is a preview and D1018 download ( pdf file ) link at the bottom of this page. Total 2 Pages |
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D1018UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
B
A
E
C (2 pls)
K 12 34
FG
87 65
J
Typ .
D
M
Q
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
PIN 1
PIN 3
PIN 5
PIN 7
PI N O H
DD
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
SOURCE (COMMON) PIN 6
GATE 1
PIN 8
DRAIN 1
SOURCE (COMMON)
GATE 2
SOURCE (COMMON)
DIM mm
A 9.14
B 12.70
C 45°
D 6.86
E 0.76
F 9.78
G 19.05
H 4.19
I 3.17
J 1.52R
K 1.65R
M 16.51
N 22.86
O 0.13
P 6.35
Q 10.77
Tol. Inches Tol.
0.13 0.360 0.005
0.13 0.500 0.005
5° 45° 5°
0.13 0.270 0.005
0.13 0.030 0.005
0.13 0.385 0.005
0.25 0.750 0.010
0.13 0.165 0.005
0.13 0.125 0.005
0.13 0.060R 0.005
0.13 0.065R 0.005
0.13 0.650 0.005
0.13 0.900 0.005
0.02 0.005 0.001
0.64 0.250 0.025
0.13 0.424 0.005
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
250W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
15A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for D1018 electronic component. |
Information | Total 2 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ D1018.PDF Datasheet ] |
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