DA28F016XS15 Datasheet PDF - Intel Corporation
Part Number | DA28F016XS15 | |
Description | 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY | |
Manufacturers | Intel Corporation | |
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28F016XS
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
SYNCHRONOUS FLASH MEMORY
n Effective Zero Wait-State Performance
up to 33 MHz
Synchronous Pipelined Reads
n SmartVoltage Technology
User-Selectable 3.3V or 5V VCC
User-Selectable 5V or 12V VPP
n 0.33 MB/sec Write Transfer Rate
n Configurable x8 or x16 Operation
n 56-Lead TSOP and SSOP Type I
Package
n Backwards-Compatible with 28F008SA
Command-Set
n 2 µA Typical Deep Power-Down
n 1 mA Typical Active ICC Current in
Static Mode
n 16 Separately-Erasable/Lockable
128-Kbyte Blocks
n 1 Million Erase Cycles per Block
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining very high read performance with the intrinsic
nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memory paradigm of
shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for
improved system performance. The innovative capabilities of the 28F016XS enable the design of direct-
execute code and mass storage data/file flash memory systems.
The 28F016XS is the highest performance high-density nonvolatile read/program flash memory solution
available today. Its synchronous pipelined read interface, flexible VCC and VPP voltages, extended cycling,
fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a
highly flexible memory component suitable for resident flash component arrays on the system board or
SIMMs. The synchronous pipelined interface and x8/x16 architecture of the 28F016XS allow easy interface
with minimal glue logic to a wide range of processors/buses, providing effective zero wait-state read
performance up to 33 MHz. The 28F016XS’s dual read voltage allows the same component to operate at
either 3.3V or 5.0V VCC. Programming voltage at 5V VPP minimizes external circuitry in minimal-chip, space
critical designs, while the 12.0V VPP option maximizes program/erase performance. Its high read performance
combined with flexible block locking enable both storage and execution of operating systems/application
software and fast access to large data tables. The 28F016XS is manufactured on Intel’s 0.6 µm ETOX IV
process technology.
November 1996
Order Number: 290532-004
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28F016XS FLASH MEMORY
Number
-004
REVISION HISTORY (Continued)
Description
Require all VCC Tolerences to be within 5% of Operational Voltage
IPPES Is Pushed to 200 µA from 50 Max
ICCD Is Pushed to 10 µA from 5 Max
Updated tAVAV at 3.3V
Updated tELEH at 3.3V and 5.0V
5
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Information | Total 30 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ DA28F016XS15.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
DA28F016XS15 | The function is 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY. Intel Corporation | |
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