Datasheet D45H8 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	D45H8	Complementary Silicon Power Transistors D44H Series (NPN), D45H Series (PNP) Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and	ON Semiconductor	transistor
2	D45H8	PNP Power Amplifier D45H8 / NZT45H8 Discrete POWER & Signal Technologies D45H8 NZT45H8 C B E C E C TO-220 SOT-223 B PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. Absolute Maximum Ratings* Symbol VCEO IC TJ,	Fairchild Semiconductor	amplifier
3	D45H8	Complementary power transistors D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are in	STMicroelectronics	transistor
4	D45H8	COMPLEMENTARY SILICON POWER TRANSISTORS D44H Series (NPN), D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as	ON Semiconductor	transistor
5	D45H8	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by D44H/D Complementary Silicon Power Transistors . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. • Low Collector�	Motorola Inc	transistor

D45 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	D4503B	Hex 2 State Buffer	ETC	buffer
2	D45128163G5	UPD45128163G5 DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 �	NEC	data
3	D45128441G5	UPD45128441G5 DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 �	NEC	data
4	D45128841G5	UPD45128841G5 DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 �	NEC	data
5	D4515	Low-frequency amplification shell rated bipolar transistors R D 2004.01 1/5 2004.01 2/5 (mA) Ic (A) 10 500mA 450mA 400mA 350mA 300mA 250mA 200mA 5 150mA 100mA 50mA 2 01 - 34 VCE (V) 5 2004.01 3/5 2004.01 4/5 2004.01 5/5	JILIN SINO	transistor
6	D4515	NPN Transistor	ATE	transistor
7	D4516161CG5	UPD4516161CG5 www.Da	NEC	data

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Número de pieza	Descripción	Fabricantes	PDF
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