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Datasheet D45C2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D45C2 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
D45C2
DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C2
APPLICATIONS ·Designed for various specific and general purpose application
such as: output and |  Inchange Semiconductor | transistor |
| 2 | D45C2 | POWER TRANSISTORS(4A/30-80V/30W) A
A
A
|  Mospec Semiconductor | transistor |
| 3 | D45C2 | COMPLEMENTARY SILICON POWER TRANSISTORS |  Boca Semiconductor Corporation | transistor |
| 4 | D45C2 | Trans GP BJT PNP 30V 6A 3-Pin(3+Tab) TO-220 |  New Jersey Semiconductor | data |
| 5 | D45C2 | Trans GP BJT PNP 30V 6A 3-Pin(3+Tab) TO-220 | New Jersey Semiconductor | data |
D45 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D4503B | Hex 2 State Buffer ETC buffer | | |
| 2 | D45128163G5 | UPD45128163G5
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 �  NEC data | | |
| 3 | D45128441G5 | UPD45128441G5 DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 � NEC data | | |
| 4 | D45128841G5 | UPD45128841G5
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 � NEC data | | |
| 5 | D4515 | Low-frequency amplification shell rated bipolar transistors R
D
2004.01
1/5
2004.01
2/5
(mA)
Ic (A)
10
500mA
450mA 400mA
350mA 300mA 250mA
200mA
5 150mA
100mA
50mA
2
01
-
34
VCE (V)
5
2004.01
3/5
2004.01
4/5
2004.01
5/5
 JILIN SINO transistor | | |
| 6 | D4515 | NPN Transistor ATE transistor | | |
| 7 | D4516161CG5 | UPD4516161CG5
www.Da NEC data | |
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