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Datasheet DB440 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DB440 | NPN SILICON EPIBASE TRANSISTORS |  Siemens Semiconductor Group | transistor |
DB4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DB4 | SILICON BIDIRECTIONAL DIACS DB3, DB4, DC34
SILICON BIDIRECTIONAL DIACS
The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. These diacs are int  SEMTECH data | | |
| 2 | DB4 | SILICON BIDIRECTIONAL DIAC MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
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Features
l The three layer, two terminal, axial lead, hermetically sealed
diacs are designed specifically for triggering thyristors.
• Lead Free  MCC data | | |
| 3 | DB4 | DIAC DB3 DB4 SMDB3
®
DIAC
FEATURES
s VBO : 32V and 40V s LOW BREAKOVER CURRENT
DESCRIPTION
Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorenscent lamp ballast  STMicroelectronics data | | |
| 4 | DB4 | TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS (DIACS) DC COMPONENTS CO., LTD.
R
DB3 THRU DB4
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS (DIACS)
FEATURES
* Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampd  Dc Components diode | | |
| 5 | DB4 | SILICON BIDIRECTIONAL DIAC CE
CHENYI ELECTRONICS FEATURES
The three layer,two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover symmetry is within three volts(DB3,DC  Shanghai Lunsure Electronic Tech data | | |
| 6 | DB4 | Bidirectional Si-Trigger-Diodes (DIAC) DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC)
Breakover voltage Durchbruchsspannung Peak pulse current Max. Triggerimpuls Glass case Glasgehäuse Weight approx. Gewicht ca.
Dimensions / Maße in mm
28 ... 45 V ±2A DO-35 SOD-27 0.13 g see page 16 siehe S  Diotec Semiconductor diode | | |
| 7 | DB4 | SILICON BIDIRECTIONAL DIAC SIYU R
双向触发二极管
DO-35 Glass
DB3/DB4
SILICON BIDIRECTIONAL DIAC
特征 Features
·反向漏电流低 Low reverse leakage ·正向浪涌承受能力较强 High forward surge capability ·高温焊接保证 High temperature soldering guaranteed: 260℃/10 秒, 0.375" (9.5mm)引线长度�  SIYU data | |
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