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Datasheet DF02M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DF02M | Diode, Rectifier |  American Microsemiconductor | diode |
| 2 | DF02M | 1A Single Phase D.I.L. Rectifier Bridge Bulletin U2788 rev. G 04/03
DF SERIES
1A Single Phase D.I.L. Rectifier Bridge
Features
• Glass passivated chips • Leads on standard 0.1" grid • Suitable for automatic insertion • High surge current capability • Fully characterised data • Wide temperature range • Surface mount option |  International Rectifier | rectifier |
| 3 | DF02M | 1 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |  Fuji Electric | rectifier |
| 4 | DF02M | 1.0A GLASS PASSIVATED BRIDGE RECTIFIERS DF005M - DF10M
1.0A GLASS PASSIVATED BRIDGE RECTIFIERS Features
· · · · · · · Glass Passivated Die Construction Diffused Junction Low Forward Voltage Drop, High Current Capability Surge Overload Rating to 50A Peak Designed for Printed Circuit Board Applications Plastic Material - UL Flammabil |  Diodes Incorporated | rectifier |
| 5 | DF02M | MINIATURE GLASS PASSIVATED SINGLE-PHASE-BRIDGE RECTIFIER DF005M THRU DF10M
MINIATURE GLASS PASSIVATED SINGLE-PHASE-BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Case Style DFM
Forward Current - 1.0 Ampere
FEATURES
0.255 (6.5) 0.315 (8.00) 0.245 (6.2) 0.285 (7.24)
0.335 (8.51) 0.320 (8.12)
♦ This series is UL listed under the Recognized Compone |  General Semiconductor | rectifier |
DF0 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DF0.01-C10 | DC Current transducer DF-C10 DC Current transducer DF-C10
For the electronic mesurement of low DC currents, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit)
IPN = 10..500mA
Preliminary
Electrical data
Primary nominal current IPN (mA.t) 10 20 50 100 300 500 IO C VOUT Vc I  LEM data | | |
| 2 | DF0.02-C10 | DC Current transducer DF-C10 DC Current transducer DF-C10
For the electronic mesurement of low DC currents, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit)
IPN = 10..500mA
Preliminary
Electrical data
Primary nominal current IPN (mA.t) 10 20 50 100 300 500 IO C VOUT Vc I LEM data | | |
| 3 | DF0.05-C10 | DC Current transducer DF-C10 DC Current transducer DF-C10
For the electronic mesurement of low DC currents, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit)
IPN = 10..500mA
Preliminary
Electrical data
Primary nominal current IPN (mA.t) 10 20 50 100 300 500 IO C VOUT Vc I LEM data | | |
| 4 | DF0.1-C10 | DC Current transducer DF-C10 DC Current transducer DF-C10
For the electronic mesurement of low DC currents, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit)
IPN = 10..500mA
Preliminary
Electrical data
Primary nominal current IPN (mA.t) 10 20 50 100 300 500 IO C VOUT Vc I LEM data | | |
| 5 | DF0.3-C10 | DC Current transducer DF-C10 DC Current transducer DF-C10
For the electronic mesurement of low DC currents, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit)
IPN = 10..500mA
Preliminary
Electrical data
Primary nominal current IPN (mA.t) 10 20 50 100 300 500 IO C VOUT Vc I LEM data | | |
| 6 | DF0.5-C10 | DC Current transducer DF-C10 DC Current transducer DF-C10
For the electronic mesurement of low DC currents, with galvanic isolation between the primary (High power) and the secondary circuits (Electronic circuit)
IPN = 10..500mA
Preliminary
Electrical data
Primary nominal current IPN (mA.t) 10 20 50 100 300 500 IO C VOUT Vc I LEM data | | |
| 7 | DF0038B | IR Preamplifier for Remote Control System Product Specification
DF0038B
IR Preamplifier for Remote Control System
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No: TDSPEC2006E Date: 2002.10.
Tide Microelectronics DF0038B IR Preamplifier for Remote Control System
GENERAL DESCRIPTION
The DF0038B is a high performance inf  Tide amplifier | |
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