(PDF) AM81719-040 Datasheet - RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS

Número de pieza	AM81719-040
Descripción	RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS
Fabricantes	STMicroelectronics
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No Preview Available ! AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS ...... REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN PRELIMINARY DATA .400 X .400 2 LFL (M228) hermetically sealed ORDER CODE AM81719-040 BRANDING 81719-40 PIN CONNECTION DESCRIPTION The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW com- munications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wire- bonding is employed to ensure long-term reliabil- ity and product consistency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol P ar ame te r PDIS S Power Dissipation* IC Device Current* VCC Collector-Supply Voltage* TJ Junction Temperature T ST G Storage Temperature THERMAL DATA RTH (j -c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation 1. Collector 2. Base 3. Emitter 4. Base V alu e 79.5 4.8 30 200 − 65 to +200 Un it W A V °C °C 2.2 °C/W July 6, 1995 1/3 1 page

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PDF AM81719-040 Data sheet ( Hoja de datos )