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PDF AM81214-060 Data sheet ( Hoja de datos )
| Número de pieza | AM81214-060 | |
| Descripción | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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AM81214-060
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
RUGGEDIZED VSWR ∞:1
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 55 W MIN. WITH 6.6 dB GAIN
.400 x .400 2NLFL (S042)
hermeticaly sealed
ORDER CODE
AM81214-060
BRANDING
81214-60
DESCRIPTION
The AM81214-060 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding ∞:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM81214-060 is supplied in the AMPAC™
Hermetic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
Pa ra met er
Power Dissipation* (TC ≤ 100°C)
IC Device Current*
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
107
5.0
32
250
− 65 to +200
Unit
W
A
V
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
August 1992
1.4 °C/W
1/6
1 page  
TEST CIRCUIT
AM81214-060
PACKAGE MECHANICAL DATA
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AM81214-060.PDF ] | |
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