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PDF AM81214-015 Data sheet ( Hoja de datos )
| Número de pieza | AM81214-015 | |
| Descripción | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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AM81214-015
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 14.5 W MIN. WITH 8.6 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM 81214-015
B RA ND IN G
81214-15
DESCRIPTION
The AM81214-015 device is a high power Class C
transistor specifically designed for L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles, and temperatures and
is capable of withstanding 5:1 output VSWR at rated
RF conditions. Low RF thermal resistance and com-
puterized automatic wire bonding techniques ensure
high reliability and product consistency.
AM81214-015 is supplied in the grounded IMPAC™
Hermetic Metal/Ceramic package with internal
input/output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
Pa ra met er
Power Dissipation* (TC ≤ 100°C)
IC Device Current*
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
37.5
1.8
32
250
− 65 to +200
Unit
W
A
V
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
4.0 °C/W
August 1992
1/4
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AM81214-015.PDF ] | |
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