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Datasheet BAV99 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BAV99 | DUAL SERIES SWITCHING DIODE BAV99
CASE 318-02/03, STYLE 11
SOT-23 (TO-236AA/AB)
DUAL SERIES SWITCHING DIODE
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current
Symbol vR
if
'FM(surge)
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, T^ = 25°C Derate above 25°C
Symbol PD
St | Motorola Semiconductors | diode |
2 | BAV99 | Diodes Diodes
BA Series
Features:
• Fast switching speed • Surface mount package ideally suited for automatic insertion • For general purpose switching applications • High conductance
SOT-23
Dimensions : Inches (Millimetres)
BAW56 Marking : A1
www.element14.com www.farnell.com www.newark.com
B | Multicomp | diode |
3 | BAV99 | Surface Mount Switching Diode WEITRON
Surface Mount Switching Diode
Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-23 Package
BAS16 / BAV70 BAW56 / BAV99
SWITCHING DIODE 200-215m AMPERRES
70-75 VOLTS
3 1
2
SOT-23
SOT-23 Outline Dimensions
A
TOP VIEW
BC
E G | WEITRON | diode |
4 | BAV99 | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Re | KEC | diode |
5 | BAV99 | Plastic-Encapsulate Diodes WILLAS
SO1.0TA-2SU3RFPAlCaEsMtOicUN-ET SnCcHaOTpTsKYuBlaARteRIEDRiRoEdCTeIFsIERS -20V- 200V
SOD-123+ PACKAGE
BAV70FM120-M+ BAV99 THRU BAW5F6M1200-M+
Pb Free Product
Features
SWITCHI•NBGatcDhIpOroDcEess design, excellent power dissipation offers
better reverse leakage current and thermal resistan | WILLAS | diode |
BAV Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BAV10 | High-speed diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAV10 High-speed diode
Product specification Supersedes data of April 1996 1996 Sep 16
Philips Semiconductors
Product specification
High-speed diode
FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 6 NXP Semiconductors diode | | |
2 | BAV100 | Silicon Epitaxial Planar Diodes SURGE diode | | |
3 | BAV100 | Hermetically Sealed Glass High Voltage Switching Diodes Small Signal Product
CREAT BY ART
BAV100/101/102/103
Taiwan Semiconductor
Hermetically Sealed Glass High Voltage Switching Diodes
FEATURES
- High voltage switching device - Ideal for automated placement - Hermetically sealed glass - Compression bonded construction - All external surfaces are cor Taiwan Semiconductor diode | | |
4 | BAV100 | Small Signal Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
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Features
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Moisture Sensitivity Leve MCC diode | | |
5 | BAV100 | HIGH SPEED SILICON DIODES Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
BAV100, BAV101 BAV102, BAV103
SOD - 80C Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a white band
Hermetically Sealed, Glass Silicon Diodes
Intended for Switching and Gener CDIL diode | | |
6 | BAV100 | Surface Mount Small Signal Switching Diode Elektronische Bauelemente
BAV100 ~ BAV103
Surface Mount Small Signal Switching Diode
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
SOD-80 (Mini-MELF) Package Surface Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction SeCoS diode | | |
7 | BAV100 | Ultrafast silicon rectifier diodes BAV 100...BAV 103
Surface mount diode
Ultrafast silicon rectifier diodes
BAV 100...BAV 103 Forward Current: 0,2 A Reverse Voltage: 50 to 300 V
Features
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&
&
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' ' ( &
)
Semikron rectifier | |
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Número de pieza | Descripción | Fabricantes | |
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