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Número de pieza | BAT86 | |
Descripción | SMALL SIGNAL SCHOTTKY DIODES | |
Fabricantes | Micro Commercial Components | |
Logotipo | ||
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omponents
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Features
· For general purpose applications
· These diodes features very low turn-on voltage and fast switching.
These devices are protected by a PN junction guard ring against
excessive voltage,such as electrostatic discharges.
· These diode is also available in the Mini-MELF case with type
designation LL86
· Metal-on-silicon Schottky barrier device which is protected by a PN
junction guard ring. The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,and low logic applications.
MECHANICAL DATA
· Case: Do-35 glass case
· Polarity: Color band denotes cathode end
· Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols Value
Repetitive Peak Reverse Voltage
Forward Continuous Current at T =250C
Repetitive Peak Forward Current at t<1s,ä< 0.5,TA=250C
VR
IF
IFRM
50
2001)
3001)
Units
V
mA
mA
Power Dissipation at TA=650C
Junction temperature
Ambient Operating temperature Range
Storage Temperature Range
Ptot
TJ
TA
TSTG
2001)
125
-55~+125
-55~+150
mW
0C
0C
0C
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
BAT86
SMALL SIGNAL
SCHOTTKY
DIODES
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
Reverse breakdown voltage Tested with 10µA pulses
V(BR)R
50
Forward voltage
Pulse Test tp 300µs,δ 2%
at IF=0.1mA,
at IF=1mA,
at IF=10mA,
at IF=30mA,
at IF=100mA
Leakage current VR=25V
Junction Capacitance at VR=1V ,f=1MHz
Reverse recovery time Form IF=10mA,IR=10mA,IR=1mA
VF
VF
VF
VF
VF
IR
CJ
trr
Thermal resistance junction to ambient Air
RθJA
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
0.200
0.272
0.365
0.460
0.700
0.2
0.300
0.380
0.450
0.600
0.900
0.5
8
5
300
V
V
V
V
V
V
µA
pF
ns
K/W
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1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet BAT86.PDF ] |
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