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What is HM-6508883?

This electronic component, produced by the manufacturer "Intersil Corporation", performs the same function as "1024 x 1 CMOS RAM".


HM-6508883 Datasheet PDF - Intersil Corporation

Part Number HM-6508883
Description 1024 x 1 CMOS RAM
Manufacturers Intersil Corporation 
Logo Intersil Corporation Logo 


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HM-6508/883
March 1997
1024 x 1 CMOS RAM
Features
Description
• This Circuit is Processed in Accordance to
MIL-STD-883 and is Fully Conformant Under the Provi-
sions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . .2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• On-Chip Address Register
The HM-6508/883 is a 1024 x 1 static CMOS RAM
fabricated using self-aligned silicon gate technology.
Synchronous circuit design techniques are employed to
achieve high performance and low power operation.
On chip latches are provided for address allowing efficient
interfacing with microprocessor systems. The data output
buffers can be forced to a high impedance state for use in
expanded memory arrays.
The HM-6508/883 is a fully static RAM and may be main-
tained in any state for an indefinite period of time. Data
retention supply voltage and supply current are guaranteed
over temperature.
Ordering Information
PACKAGE TEMP. RANGE 180ns 250ns
CERDIP -55oC to +125oC HM1-
HM1-
6508B/883 6508/883
PKG. NO.
F16.3
Pinout
HM1-6508/883
(CERDIP)
TOP VIEW
E1
A0 2
A1 3
A2 4
A3 5
A4 6
Q7
GND 8
16 VCC
15 D
14 W
13 A9
12 A8
11 A7
10 A6
9 A5
PIN DESCRIPTION
A Address Input
E Chip Enable
W Write Enable
D Data Input
Q Data Output
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
6-69
File Number 2985.1

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HM-6508883 equivalent
HM-6508/883
TABLE 3. HM-6508/883 ELECTRICAL PERFORMANCE SPECIFICATIONS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTE TEMPERATURE
MIN
MAX
UNITS
Input Capacitance
CI VCC = Open, f = 1MHz, All
1
Measurements Referenced
to Device Ground
TA = +25oC
- 6 pF
Output Capacitance
CO VCC = Open, f = 1MHz, All
Measurements Referenced
to Device Ground
1
TA = +25oC
- 10 pF
NOTE:
1. The parameters listed in Table 3 are controlled via design or process; parameters are characterized upon initial design and after major
process and/or design changes.
CONFORMANCE GROUPS
Initial Test
Interim Test
PDA
Final Test
Group A
Groups C & D
TABLE 4. APPLICABLE SUBGROUPS
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
Samples/5005
Samples/5005
SUBGROUPS
-
1, 7, 9
1
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 7, 9
Timing Waveforms
A
E
W
D
O
TIME
REFERENCE
(8) TAVEL
(7)
TEHEL
HIGH
TELAX
(9)
VALID
TELEH
(6)
TELEL
(8) TAVEL
TEHEL
NEXT
(15)
(7)
TEHOZ
(5)
-1
TELOV
TELOX (3)
(1)
TAVQV
(3)
TEHOZ
VALID OUTPUT
(5)
0 12
FIGURE 1. READ CYCLE
3 45
6-73


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Featured Datasheets

Part NumberDescriptionMFRS
HM-6508883The function is 1024 x 1 CMOS RAM. Intersil CorporationIntersil Corporation

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