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PDF HN29W25611 Data sheet ( Hoja de datos )
| Número de pieza | HN29W25611 | |
| Descripción | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HN29W25611 Series
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-995B (Z)
Rev. 1.0
Dec. 10, 1999
Description
The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29W25611 are more than 16,057 (98% of all
sector address) and less than 16,384 sectors.
Features
• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Organization
AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
Data register: (2048 + 64) bytes
• Multi-level memory cell
2 bit/per memory cell
• Automatic programming
Sector program time: 3.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
• Automatic erase
Single sector erase time: 1.5 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
1 page  
Memory Map and Address
Sector address
3FFFH
3FFEH
3FFDH
2048 bytes
2048 bytes
2048 bytes
HN29W25611 Series
64 bytes
64 bytes
64 bytes
0002H
0001H
0000H
000H
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
800H
83FH Column address
2048 + 64 bytes
Control bytes
Address
Cycles
I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7
Sector address SA (1): First cycle A0 A1 A2 A3 A4 A5 A6 A7
SA (2): Second cycle A8 A9 A10 A11 A12 A13 ×*2 ×
Column address CA (1): First cycle A0 A1 A2 A3 A4 A5 A6 A7
CA (2): Second cycle A8 A9 A10 A11 × × × ×
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
by reading the sector valid data written in a part of the column address 800 to 83F
(The specific address is TBD.). The sector valid data must be read and kept outside
of the sector before the sector erase. When the sector is programmed, the sector
valid data should be written back to the sector.
2. An × means "Don't care". The pin level can be set to either VIL or VIH, referred
to DC characteristics.
5
5 Page 
HN29W25611 Series
Program (4): Program data PD0 to PD2111 is programmed into the sector of address SA automatically by
internal control circuits. When CA is input, program data PD (m) to PD (m + j) is programmed from CA into
the sector of address SA automatically by internal control circuits. By using program (4), data can be
rewritten for each sector before the following erase. So the column data before programming operation are
either "1" or "0". In this mode, E/W number of times must be counted whenever program (4) execute. After
the programming starts, the program completion can be checked through the RDY/Busy signal and status data
polling. The sector valid data should be included in the program data PD2048 to PD2111.
16383
Sector
address
16383
Sector
address
16383
Sector
address
Memory array
0
Memory array
0
Memory array
0
0 2111
Register
Serial read (1) (Without CA)
Program (1) (Without CA)
Program (2)
0 Column address 2111
Register
Serial read (1) (With CA)
Program (1) (With CA)
0 2048 2111
Register
Serial read (2)
Program (3)
Status Register Read
The status returns to the status register read mode from standby mode, when CE and OE is VIL. In the status
register read mode, I/O pins output the same operation status as in the status data polling defined in the
function description.
Identifier Read
The manufacturer and device identifier code can be read in the identifier read mode. The manufacturer and
device identifier code is selected with CDE VIL and VIH, respectively.
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet HN29W25611.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HN29W25611 | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | Hitachi Semiconductor |
| HN29W25611T | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | Hitachi Semiconductor |
| HN29W25611T-50 | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | Hitachi Semiconductor |
| HN29W25611T-50H | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | Hitachi Semiconductor |
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