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What is HUF75545S3S?

This electronic component, produced by the manufacturer "Intersil Corporation", performs the same function as "75A/ 80V/ 0.010 Ohm/ N-Channel/ UltraFET Power MOSFET".


HUF75545S3S Datasheet PDF - Intersil Corporation

Part Number HUF75545S3S
Description 75A/ 80V/ 0.010 Ohm/ N-Channel/ UltraFET Power MOSFET
Manufacturers Intersil Corporation 
Logo Intersil Corporation Logo 


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Data Sheet
HUF75545P3, HUF75545S3S
June 1999 File Number 4738.1
75A, 80V, 0.010 Ohm, N-Channel, UltraFET
Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF75545P3
Symbol
GATE
SOURCE
HUF75545S3S
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.010Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.semi.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75545P3
TO-220AB
75545P
HUF75545S3S
TO-263AB
75545S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF75545P3, HUF75545S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC=
(TC=
2150o0CoC, ,VVGGSS==101V0V) )(F(Figiugruere2)2).
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
80
80
±20
75
73
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
270 W
1.8 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300 oC
260 oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1 CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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HUF75545S3S equivalent
HUF75545P3, HUF75545S3S
Typical Performance Curves (Continued)
1.2
ID = 250µA
1.1
10000
1.0 1000
CISS = CGS + CGD
COSS CDS + CGD
0.9
0.8
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 40V
8
CRSS = CGD
VGS = 0V, f = 1MHz
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 75A
ID = 35A
0
0 30 60 90 120
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
5


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Part Details

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