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What is AM28F256A-120EEB?

This electronic component, produced by the manufacturer "Advanced Micro Devices", performs the same function as "256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms".


AM28F256A-120EEB Datasheet PDF - Advanced Micro Devices

Part Number AM28F256A-120EEB
Description 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
Manufacturers Advanced Micro Devices 
Logo Advanced Micro Devices Logo 


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FINAL
Am28F256A
256 Kilobit (32 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance
— Access times as fast as 70 ns
s CMOS low power consumption
— 30 mA maximum active current
— 100 µA maximum standby current
— No data retention power consumption
s Compatible with JEDEC-standard byte-wide
32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
s 100,000 write/erase cycles minimum
s Write and erase voltage 12.0 V ±5%
s Latch-up protected to 100 mA from –1 V to
VCC +1 V
s Embedded Erase Electrical Bulk Chip-Erase
— 1.5 seconds typical chip-erase including
pre-programming
s Embedded Program
— 14 µs typical byte-program including time-out
— 0.5 second typical chip program
s Command register architecture for
microprocessor/microcontroller compatible
write interface
s On-chip address and data latches
s Advanced CMOS flash memory technology
— Low cost single transistor memory cell
s Embedded algorithms for completely
self-timed write/erase operations
GENERAL DESCRIPTION
The Am28F256A is a 256 K Flash memory organized
as 32 Kbytes of 8 bits each. AMD’s Flash memories
offer the most cost-effective and reliable read/write
non- volatile random access memory. The Am28F256A
is packaged in 32-pin PDIP, PLCC, and TSOP versions.
It is designed to be reprogrammed and erased in-sys-
tem or in standard EPROM programmers. The
Am28F256A is erased when shipped from the factory.
The standard Am28F256A offers access times as fast
as 70 ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the Am28F256A has separate chip enable (CE#)
and output enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F256A uses a command register to manage this
functionality, while maintaining a standard JEDEC
Flash Standard 32-pin pinout. The command register
allows for 100% TTL level control inputs and fixed
power supply levels during erase and programming.
AMD’s Flash technology reliably stores memory con-
tents even after 100,000 erase and program cycles.
The AMD cell is designed to optimize the erase and
Publication# 18879 Rev: C Amendment/+2
Issue Date: May 1998
programming mechanisms. In addition, the combina-
tion of advanced tunnel oxide processing and low inter-
nal electric fields for erase and programming
operations produces reliable cycling. The Am28F256A
uses a 12.0V± 5% VPP high voltage input to perform
the erase and programming functions.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 milliamps on
address and data pins from –1 V to VCC +1 V.
Embedded Program
The Am28F256A is byte programmable using the
Embedded Programming algorithm. The Embedded
Programming algorithm does not require the system to
time-out or verify the data programmed. The typical
room temperature programming time of the
Am28F256A is one half second.
Embedded Erase
The entire chip is bulk erased using the Embedded
Erase algorithm. The Embedded Erase algorithm
automatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are

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AM28F256A-120EEB equivalent
CONNECTION DIAGRAMS (continued)
A11 1
A9 2
A8 3
A13 4
A14 5
NC 6
WE 7
VCC
8
VPP 9
NC 10
NC 11
A12 12
A7 13
A6 14
A5 15
A4 16
32-Pin — Standard Pinout
OE#
A10
CE#
D7
D6
D5
D4
D3
VSS
D2
D1
D0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin — Reverse Pinout
LOGIC SYMBOL
32 OE#
31 A10
30 CE#
29 D7
28 D6
27 D5
26 D4
25 D3
24 VSS
23 D2
22 D1
21 D0
20 A0
19 A1
18 A2
17 A3
32 A11
31 A9
30 A8
29 A13
28 A14
27 NC
26 WE#
25 VCC
24 VPP
23 NC
22 NC
21 A12
20 A7
19 A6
18 A5
17 A4 18879C-4
15
A0–A14
DQ0–DQ7
8
CE# (E#)
OE# (G#)
WE# (W#)
18879C-5
Am28F256A
5


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
AM28F256A-120EEThe function is 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms. Advanced Micro DevicesAdvanced Micro Devices
AM28F256A-120EEBThe function is 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms. Advanced Micro DevicesAdvanced Micro Devices

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