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PDF ASI10615 Data sheet ( Hoja de datos )
| Número de pieza | ASI10615 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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HF250-50
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF250-50 is Designed for
FEATURES:
• PG = 14 dB min. at 220 W/30 MHz
• IMD3 = 150 dBc max. at 220 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 40 A
VCBO
110 V
VCEO
55 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.40 OC/W
PACKAGE STYLE 0.500 4L FLG
A
FULL R
.112x45° L
EC
Ø.125 NOM.
C
BB
E
E
H
D
GF
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
D .720 / 18.28
.255 / 6.48
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
.505 / 12.83
H .003 / 0.08
.007 / 0.18
I .090 / 2.29
J .150 / 3.81
.110 / 2.79
.175 / 4.45
K .280 / 7.11
L .980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10615
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVEBO
IE = 20 mA
ICEO
VCE = 30 V
ICES VCE = 60 V
hFE
VCE = 6.0 V
IC = 10 A
MINIMUM TYPICAL MAXIMUM
55
110
4.0
10
10
15 45
UNITS
V
V
V
mA
mA
---
Cob VCB = 50 V
f = 1.0 MHz
360 pF
GP
IMD3
ηC
VCE = 50 V
ICQ = 150 mA POUT = 250 W(PEP)
14.5
37
dB
-30 dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet ASI10615.PDF ] | |
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