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PDF ASI10531 Data sheet ( Hoja de datos )
| Número de pieza | ASI10531 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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ASI2223-4
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2223-4 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 0.75 A
VCC
PDISS
TJ
TSTG
θJC
26 V
15.9 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
11.0 OC/W
PACKAGE STYLE .400 2NL FLG
2X B
A
.025 x 45°
4x .062 x 45°
ØD
C
F
E
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
G
HI
J
K
L
MINIMUM
inches / mm
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.193 / 4.90
.450 / 11.43
.125 / 3.18
P
MN
MAXIMUM
inches / mm
.030 / 0.76
.396 / 10.06
.130 / 3.30
.407 / 10.34
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10531
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 5.0 mA
BVCER
IC = 10 mA
RBE = 10 Ω
BVEBO
IE = 1.0 mA
ICBO
VCB = 22 V
hFE VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
40
40
3.5
1.0
10 100
PG
VCC = 22 V
POUT = 4.0 W
f = 2.2 – 2.3 GHz
8.0
ηC 40
UNITS
V
V
V
mA
---
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet ASI10531.PDF ] | |
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