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PDF ASI10530 Data sheet ( Hoja de datos )
| Número de pieza | ASI10530 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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ASI2010
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2010 is Designed for General
Purpose Class C Power Amplifier
Applications up to 2300 MHz.
FEATURES:
• PG = 5 dB min. at 10 W/ 2,000 MHz
• Hermetic Microstrip Package
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 1.5 A
VCC
PDISS
TJ
TSTG
θJC
35 V
35 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
5.0 OC/W
PACKAGE STYLE .250 2L FLG
A
C
B
E
ØD
.060 x 45°
CHAMFER
G
L
HF
I
J
K
MNP
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
MINIMUM
inches / mm
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.110 / 2.79
.560 / 14.22
.790 / 20.07
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
.125 / 3.18
.117 / 2.97
MAXIMUM
inches / mm
.032 / 0.81
.255 / 6.48
.132 / 3.35
.117 / 2.97
.570 / 14.48
.810 / 20.57
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
ORDER CODE: ASI10530
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 5 mA
BVCER
IC = 15 mA
RBE = 10 Ω
BVEBO
IE = 1 mA
ICBO
VCB = 28 V
hFE VCE = 5.0 V
IC = 1000 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
5.0
15 120
UNITS
V
V
V
mA
---
Cob VCB = 28 V
f = 1.0 MHz
7.5 pF
PG VCC = 28 V
ηC
POUT = 10 W
f = 2.0 GHz
5.0
35
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet ASI10530.PDF ] | |
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