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A29001T-90 PDF Datasheet - 128K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory - AMIC Technology

Part Number A29001T-90
Description 128K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
Manufacturers AMIC Technology 
Logo AMIC Technology Logo 
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A29001T-90 datasheet, circuit
A29001/290011 Series
Preliminary
128K X 8 Bit CMOS 5.0 Volt-only,
Boot Sector Flash Memory
Features
n 5.0V ± 10% for read and write operations
n Access times:
- 55/70/90 (max.)
n Current:
- 20 mA typical active read current
- 30 mA typical program/erase current
- 1 µA typical CMOS standby
n Flexible sector architecture
- 8 Kbyte/ 4 KbyteX2/ 16 Kbyte/ 32 KbyteX3 sectors
- Any combination of sectors can be erased
- Supports full chip erase
- Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector
n Top or bottom boot block configurations available
n Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase the
entire chip or any combination of designated sectors
and verify the erased sectors
- Embedded Program algorithm automatically writes and
verifies bytes at specified addresses
n Typical 100,000 program/erase cycles per sector
n 20-year data retention at 125°C
- Reliable operation for the life of the system
n Compatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
- Superior inadvertent write protection
n Data Polling and toggle bits
- Provides a software method of detecting completion of
program or erase operations
n Erase Suspend/Erase Resume
- Suspends a sector erase operation to read data from,
or program data to, a non-erasing sector, then
resumes the erase operation
n Hardware reset pin (RESET )
- Hardware method to reset the device to reading array
data (not available on A290011)
n Package options
- 32-pin P-DIP, PLCC, or TSOP (Forward type)
General Description
The A29001 is a 5.0 volt-only Flash memory organized as
131,072 bytes of 8 bits each. The A29001 offers the RESET
function, but it is not available on A290011. The 128 Kbytes of
data are further divided into seven sectors for flexible sector
erase capability. The 8 bits of data appear on I/O0 - I/O7 while
the addresses are input on A0 to A16. The A29001 is offered in
32-pin PLCC, TSOP, and PDIP packages. This device is
designed to be programmed in-system with the standard
system 5.0 volt VCC supply. Additional 12.0 volt VPP is not
required for in-system write or erase operations. However, the
A29001 can also be programmed in standard EPROM
programmers.
The A29001 has the first toggle bit, I/O6, which indicates
whether an Embedded Program or Erase is in progress, or it is
in the Erase Suspend. Besides the I/O6 toggle bit, the A29001
has a second toggle bit, I/O2, to indicate whether the
addressed sector is being selected for erase. The A29001 also
offers the ability to program in the Erase Suspend mode. The
standard A29001 offers access times of 55, 70 and 90 ns
allowing high-speed microprocessors to operate without wait
states. To eliminate bus contention the device has separate
chip enable ( CE ), write enable ( WE ) and output enable ( OE )
controls.
The device requires only a single 5.0 volt power supply for both
read and write functions. Internally generated and regulated
voltages are provided for the program and erase operations.
The A29001 is entirely software command set compatible with
the JEDEC single-power-supply Flash standard. Commands
are written to the command register using standard
microprocessor write timings. Register contents serve as input
to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm - an internal algorithm that automatically
preprograms the array (if it is not already programmed) before
executing the erase operation. During erase, the device
automatically times the erase pulse widths and verifies proper
erase margin.
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AMIC Technology, Inc.

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A29001T-90 pdf, schematic
A29001/A290011 Series
The host system can detect whether a program or erase
operation is complete by reading the I/O7 (Data Polling) and
I/O6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or
accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents
of other sectors. The A29001 is fully erased when shipped
from the factory.
The hardware sector protection feature disables operations for
both program and erase in any combination of the sectors
Pin Configurations
of memory. This can be achieved via programming
equipment.
The Erase Suspend feature enables the user to put erase on
hold for any period of time to read data from, or program data
to, any other sector that is not selected for erasure. True
background erase can thus be achieved.
Power consumption is greatly reduced when the device is
placed in the standby mode.
The hardware RESET pin terminates any operation in
progress and resets the internal state machine to reading
array data (This feature is not available on the A290021).
n DIP
n PLCC
NC on A290011
RESET
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VCC
31 WE
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
NC on A290011
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
A29001L/
A290011L
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
n TSOP (Forward type)
A11
A9
A8
A13
A14
NC
WE
VCC
RESET
A16
A15
NC on A290011 A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A29001V/A290011V
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 VSS
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
PRELIMINARY (August, 2001, Version 0.3)
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AMIC Technology, Inc.

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A29001T-90 equivalent
A29001/A290011 Series
Requirements for Reading Array Data
To read array data from the outputs, the system must drive
the CE and OE pins to VIL. CE is the power control and
selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH all
the time during read operation. The internal state machine
is set for reading array data upon device power-up, or after
a hardware reset. This ensures that no spurious alteration
of the memory content occurs during the power transition.
No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data
on the device data outputs. The device remains enabled for
read access until the command register contents are
altered.
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing
waveforms, lCC1 in the DC Characteristics table represents
the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE and CE to
VIL, and OE to VIH. An erase operation can erase one
sector, multiple sectors, or the entire device. The Sector
Address Tables indicate the address range that each sector
occupies. A "sector address" consists of the address inputs
required to uniquely select a sector. See the "Command
Definitions" section for details on erasing a sector or the
entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can
then read autoselect codes from the internal register (which
is separate from the memory array) on I/O7 - I/O0. Standard
read cycle timings apply in this mode. Refer to the
"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
ICC2 in the Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification tables
and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O7 - I/O0. Standard read cycle timings and ICC read
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section
for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are
placed in the high impedance state, independent of the OE
input.
The device enters the CMOS standby mode when the CE
& RESET pins ( CE only on A290011) are both held at VCC
± 0.5V. (Note that this is a more restricted voltage range
than VIH.) The device enters the TTL standby mode when
CE is held at VIH, while RESET (Not available on
A290011) is held at VCC±0.5V. The device requires the
standard access time (tCE) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
ICC3 in the DC Characteristics tables represents the standby
current specification.
Output Disable Mode
When the OE input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance
state.
RESET : Hardware Reset Pin (N/A on A290011)
The RESET pin provides a hardware method of resetting
the device to reading array data. When the system drives
the RESET pin low for at least a period of tRP, the device
immediately terminates any operation in progress, tristates
all data output pins, and ignores all read/write attempts for
the duration of the RESET pulse. The device also resets
the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once
the device is ready to accept another command sequence,
to ensure data integrity.
The RESET pin may be tied to the system reset circuitry. A
system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from the
Flash memory.
Refer to the AC Characteristics tables for RESET
parameters and diagram.
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A29001T-90 diode, scr
A29001/A290011 Series
START
Embedded
Program
algorithm in
progress
Increment Address
Write Program
Command
Sequence
Data Poll
from System
Verify Data ?
Yes
No
Last Address ?
Yes
Programming
Completed
Note : See the appropriate Command Definitions table for
program command sequence.
Figure 2. Program Operation
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which
in turn invokes the Embedded Erase algorithm. The device
does not require the system to preprogram prior to erase.
The Embedded Erase algorithm automatically preprograms
and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide
any controls or timings during these operations. The
Command Definitions table shows the address and data
requirements for the chip erase command sequence.
Any commands written to the chip during the Embedded
Erase algorithm are ignored. The system can determine the
status of the erase operation by using I/O7, I/O6, or I/O2. See
"Write Operation Status" for information on these status bits.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched.
Figure 3 illustrates the algorithm for the erase operation. See
the Erase/Program Operations tables in "AC Characteristics"
for parameters, and to the Chip/Sector Erase Operation
Timings for timing waveforms.
Sector Erase Command Sequence
Sector erase is a six-bus-cycle operation. The sector erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the address of the sector to be
erased, and the sector erase command. The Command
Definitions table shows the address and data requirements
for the sector erase command sequence.
The device does not require the system to preprogram the
memory prior to erase. The Embedded Erase algorithm
automatically programs and verifies the sector for an all zero
data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these
operations.
After the command sequence is written, a sector erase time-
out of 50µs begins. During the time-out period, additional
sector addresses and sector erase commands may be
written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one
sector to all sectors. The time between these additional
cycles must be less than 50µs, otherwise the last address
and command might not be accepted, and erasure may
begin. It is recommended that processor interrupts be
disabled during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the last
Sector Erase command is written. If the time between
additional sector erase commands can be assumed to be
less than 50µs, the system need not monitor I/O3. Any
command other than Sector Erase or Erase Suspend during
the time-out period resets the device to reading array data.
The system must rewrite the command sequence and any
additional sector addresses and commands.
The system can monitor I/O3 to determine if the sector erase
timer has timed out. (See the " I/O3: Sector Erase Timer"
section.) The time-out begins from the rising edge of the final
WE pulse in the command sequence.
Once the sector erase operation has begun, only the Erase
Suspend command is valid. All other commands are ignored.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched. The system can determine the status of the erase
operation by using I/O7, I/O6, or I/O2. Refer to "Write
Operation Status" for information on these status bits.
PRELIMINARY (August, 2001, Version 0.3)
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AMIC Technology, Inc.

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A29001T-90 transistor, igbt
Timing Waveforms for Chip/Sector Erase Operation
A29001/A290011 Series
Addresses
CE
Erase Command Sequence (last two cycles)
tWC tAS
2AAh
SA
555h for chip erase
tAH
OE
WE
Data
tVCS
tGHWL
tCH
tWP
tCS
tDS
tWPH
tDH
55h
30h
10h for chip erase
VCC
Read Status Data
VA VA
tWHWH2
In
Progress
Complete
Note : SA = Sector Address. VA = Valid Address for reading status data.
PRELIMINARY (August, 2001, Version 0.3)
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AMIC Technology, Inc.

21 Page





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