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A26E001AV Datasheet PDF - AMIC Technology

Part Number A26E001AV
Description 2M and 256K MaskRAM
Manufacturers AMIC Technology 
Logo AMIC Technology Logo 

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A26E001AV datasheet, circuit
Document Title
2M and 256K MaskRAM
Revision History
Rev. No.
2.0
2.1
History
Final spec release
Change tOE speed from 150ns to 200ns
A26E001A
2M and 256K MaskRAM
Issue Date
October 12, 1998
November 20, 1998
Remark
Final
(November, 1998, Version 2.1)
AMIC Technology, Inc.

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A26E001AV equivalent
Capacitance
Symbol
Parameter
Min.
CI* Input Capacitance
CO* Input/Output Capacitance
* These parameters are sampled and not 100% tested.
AC Characteristics (ROM/SRAM Selection)
Symbol
Parameter
tRTS ROMCE Disable to RAMCE Enable Time
tSTR RAMCE Disable to ROMCE Enable Time
A26E001A
Max.
6
8
Unit
pF
pF
(TA = 25°C, f = 1.0MHz)
Conditions
TA = 25°C
f = 1.0MHz
(TA = -25°C to +85°C, VCC = 1.8V to 3.3V)
Min.
Max.
Unit
10 - ns
10 - ns
AC Characteristics (ROM Selected)
(TA = -25°C to +85°C, VCC = 1.8V to 3.3V)
Symbol
Parameter
Min.
Max.
Unit
tRC Read Cycle Time
500 - ns
tAA Address Access Time
- 450 ns
tACE ROMCE Chip Enable Access Time
- 450 ns
tOE Output Enable to Output Valid
- 200 ns
tCLZ ROMCE Chip Enable to Output in Low Z
10 - ns
tOLZ Output Enable to Output in Low Z
10 - ns
tCHZ ROMCE Chip Disable to Output in High Z
- 100 ns
tOHZ Output Disable to Output in High Z
- 100 ns
tOH Output Hold from Address Change
10 - ns
Notes: tCHZ, and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referred
to output voltage levels.
(November, 1998, Version 2.1)
4 AMIC Technology, Inc.

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Information Total 14 Pages
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