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AD401M88RBB-5 Datasheet PDF - ETC

Part Number AD401M88RBB-5
Description Low voltage operation is more suitable to be used on battery backup/ portable electronic
Manufacturers ETC 
Logo ETC Logo 
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Preview ( 28 pages )
		
AD401M88RBB-5 datasheet, circuit
ASCEND
Semiconductor
4Mx4 EDO
Data sheet
Rev.1
Page 1

1 page
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AD401M88RBB-5 pdf, schematic
AD 40 4M 4 2 V S A – 5
Ascend
Semiconductor
EDO/FPM
D-RAMBUS
DDRSDRAM
DDRSGRAM
SGRAM
SDRAM
: 40
: 41
: 42
: 43
: 46
: 48
Density
16M : 16 Mega Bits
8M : 8 Mega Bits
4M : 4 Mega Bits
2M : 2 Mega Bits
1M : 1 Mega Bit
Organization
4: x4
8 : x8
9 : x9
16 : x16
18 : x18
32 : x32 Refresh
1 : 1K 8 : 8K
2 : 2K 6 :16K
4 : 4K
Interface
V: 3.3V
R: 2.5V
Min Cycle Time ( Max Freq.)
-5 : 5ns ( 200MHz )
-6 : 6ns ( 167MHz )
-7 : 7ns ( 143MHz )
-75 : 7.5ns ( 133MHz )
-8 : 8ns ( 125MHz )
-10 : 10ns ( 100MHz )
EDO : -5 (50 ns)
-6 (60 ns)
Revision
A : 1st B : 2nd
C : 3rd D :4th
Package
C: CSP B: uBGA
T: TSOP Q: TQFP
P: PQFP ( QFP )
L: LQFP S: SOJ
Rev.1
Page 2

2 Page
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AD401M88RBB-5 equivalent
Block Diagram
WE
CAS
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
RAS
NO. 2 CLOCK
GENERATOR
COLUMN
ADDRESS
BUFFERS (11)
REFRESH
CONTROLLER
REFRESH
COUNTER
ROW
ADDRESS
BUFFERS (11)
NO. 1 CLOCK
GENERATOR
CONTROL
LOGIC
DATA-IN BUFFER
COLUMN
DECODER
2048
SENSE AMPLIFIERS
I/O GATING
2048x4
DATA-OUT
BUFFER
2048x2048x4
MEMORY
ARRAY
DQ. 1
.
DQ4
OE
Vcc
Vss
Rev.1
Page 5

5 Page
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AD401M88RBB-5 diode, scr
DC Characteristics :
(Ta = 0 to 70°C, VCC= +3.3V ±10 %, VSS= 0V)
Parameter
Input leakage current
Output leakage current
Output high Voltage
Output low voltage
Symbol
ILI
ILO
VOH
VOL
Test Conditions
0V Vin VCC + 0.3V
0V Vout VCC + 0.3V
Dout = Disable
IOH = -2mA
IOL = +2mA
AD404M42V
Unit Notes
-5 -6
Min Max Min Max
-5 5 -5 5 µA
-5 5 -5 5 µA
2.4 - 2.4 - V
- 0.4
- 0.4 V
Notes:
1. ICC is specified as an average current. It depends on output loading condition and cycle rate when the
device is selected. ICC max is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. For ICC4, address can be changed once or less within one EDO page mode cycle time.
Rev.1
Page 9

9 Page
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AD401M88RBB-5 transistor, igbt
• EDO Page Mode Read-Early-Write Cycle
RAS
CAS
ADDRESS
tCRP
tCSH
tRCD
tCAS
tASR
tCSH
tRAD
tRAH
tASC
tRAH
Row
Column 1
WE WE
tRCS
t RASP
tCPRH
tPC tRSH
tCP tCAS t CP tCAS
tASC tCAH
Column 2
tASC
tCAL
tRAL
tCAH
Column N
tRCH
tWCS
tWCH
OE
DQ1~DQ4
tOEA
tWED
OE
tRAC
OPEN
tAA
tCAC
tCPA
tAA
tCAC
tCOH
tWHZ
tDS
tDH
Data
Doutput 1
Data
Doutput 2
Data
Input N
tRP
tCRP
tCPN
Row
Rev.1
Page 21

21 Page





Information Total 28 Pages
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