|
|
PDF 1N4448W Data sheet ( Hoja de datos )
| Número de pieza | 1N4448W | |
| Descripción | Surface mount Small Signal Diodes | |
| Fabricantes | Diotec Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 1N4448W (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
1N4148W, 1N4448W
1N4148W, 1N4448W
Surface Mount Small Signal Diodes
Kleinsignal-Dioden für die Oberflächenmontage
Version 2015-07-16
Power dissipation – Verlustleistung
2 .7±0.1
Repetitive peak reverse voltage
eriodische Spitzensperrspannung
Plastic case – Kunststoffgehäuse
3 . 8±0.2
Weight approx. – Gewicht ca.
Type Plastic material has UL classification 94V-0
Code Gehäusematerial UL94V-0 klassifiziert
Dimensions - Maße [mm]
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
400 mW
75 V
~SOD-123
0.01 g
Maximum ratings (TA = 25°C)
Power dissipation − Verlustleistung
Max. average forward current – Dauergrenzstrom (dc)
Repetitive peak forward current – Periodischer Spitzenstrom
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
tp ≤ 1 µs
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
Non repetitive peak reverse voltage – Stoßspitzensperrspannung
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Grenzwerte (TA = 25°C)
1N4148W, 1N4448W
Ptot 400 mW 1)
IFAV 150 mA 1)
IFRM 300 mA 1)
IFSM
IFSM
VRRM
VRSM
500 mA 1)
2A
75 V
100 V
Tj -55...+150°C
TS -55…+150°C
Characteristics (Tj = 25°C)
Forward voltage
Durchlass-Spannung
1N4148W
1N4448W
Leakage current – Sperrstrom 2)
Leakage current – Sperrstrom, Tj = 125°C 2)
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
Reverse recovery time – Sperrverzug
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
IF = 10 mA
IF = 5 mA
IF = 100 mA
VR = 20 V
VR = 75 V
VR = 20 V
VR = 75 V
Kennwerte (Tj = 25°C)
VF < 1.0 V
VF 0.62...0.72 V
F 1V
IR < 25 nA
IR 5 µA
IR < 30 µA
IR 50 µA
CT 4 pF
trr < 4 ns
RthA < 400 K/W 1)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N4448W.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1N4448 | SIGNAL DIODE |  Rectron Semiconductor |
| 1N4448 | SILICON EPITAXIAL PLANAR DIODE |  Semtech Corporation |
| 1N4448 | SMALL SIGNAL SWITCHING DIODE |  Shanghai Lunsure Electronic Tech |
| 1N4448 | Small Signal Diodes |  General Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |