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Datasheet BCF29 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BCF29 | PNP general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCF29; BCF30 PNP general purpose transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22
Philips Semiconductors
Product specificati |  NXP Semiconductors | transistor |
| 2 | BCF29 | Surface mount Si-Epitaxial PlanarTransistors BCF 29, BFC 30 PNP
General Purpose Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
250 mW SOT-23 (TO-236) 0.01 g
2.9 ±0.1 0.4
3
1.1
Plastic case Kunststoffgehäu |  Diotec Semiconductor | transistor |
| 3 | BCF29 | (BCF29 / BCF30) PNP General Purpose Transistors SMD Type
Transistors IC
PNP General Purpose Transistors BCF29,BCF30
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
Low current (max. 100 mA). Low voltage (max. 32 V).
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1 |  Guangdong Kexin | transistor |
BCF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BCF020T | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP BCF020T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm)
The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain  BeRex data | | |
| 2 | BCF030T | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP BCF030T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)
The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 300 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain BeRex data | | |
| 3 | BCF040T | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP BCF040T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm)
The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 400 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain BeRex data | | |
| 4 | BCF060T | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP BCF060T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain BeRex data | | |
| 5 | BCF080T | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP BCF060T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain BeRex data | | |
| 6 | BCF120T | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP BCF120T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm)
The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 1200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-ga BeRex data | | |
| 7 | BCF240T | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP BCF240T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm)
The BeRex BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 2400 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-ga BeRex data | |
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