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PDF BC857BV Data sheet ( Hoja de datos )
| Número de pieza | BC857BV | |
| Descripción | PNP general purpose double transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BC857BV
PNP general purpose double
transistor
Product specification
Supersedes data of 2001 Sep 10
2001 Nov 07
1 page  
Philips Semiconductors
PNP general purpose double transistor
Product specification
BC857BV
Graphical information BC857BV
1000
handbook, halfpage
hFE
800
MHB975
600
(1)
400
(2)
200 (3)
0
−10−2 −10−1
1
10 102 103
IC (mA)
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2 DC current gain; typical values.
−1200
handVbBooEk, halfpage
(mV)
−1000
MHB976
−800
−600
(1)
(2)
−400
−200
(3)
−−010−2 −10−1
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−1
−10
−102
−103
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−104
handbook, halfpage
VCEsat
(mV)
−103
MHB977
−102
(1)
−1−010−1
(2)
(3)
−1
−10
−102
−103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−1200
hanVdBbEooska, thalfpage
(mV)
−1000
−800
−600
−400
(1)
(2)
(3)
MHB978
−200
−010−1
−1
−10 −102 −103
IC (mA)
IC/IB 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BC857BV.PDF ] | |
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