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PDF BC857B Data sheet ( Hoja de datos )
| Número de pieza | BC857B | |
| Descripción | PNP General Purpose Transistor | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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PNP small signal transistor
BC857B
Features
1) Ideal for switching and AF amplifier applications.
2) High current gain.
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
BC857B
Taping
T116
3000
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Limits
−50
−45
−5
−0.1
0.20
0.35
150
−65 to 150
Unit
V
V
V
A
W
W∗
°C
°C
Dimensions (Unit : mm)
BC857B
2.9
0.4
(3)
0.95
0.45
(1)Emitter
(2)Base
(3)Collector
(2) (1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : G3F
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Collector-base breakdown voltage BVCBO
Emitter-base breakdown voltage
BVEBO
Collector-base cutoff current
ICBO
VCE(sat1)
Collector-emitter saturation voltage
VCE(sat2)
Base-emitter voltage
DC current transfer ratio
Transition frequency
VBE(on)
hFE
fT
Collector outpu capacitance
Cob
Collector-base cutoff current
ICBO
Min.
−45
−50
−5
−
−
−
−0.6
210
−
−
−
Typ. Max. Unit
−−V
−−V
−−V
− −0.015 μA
− −0.3 V
− −0.65 V
− −0.75 V
− 480 −
250 − MHz
− 4.5 pF
− −4 μA
Conditions
IC= −1mA
IC= −50μA
IE= −50μA
VCB= −30V
IC/IB= −10mA/ −0.5mA
IC/IB= −100mA/ −5mA
VCE= −5V, IC= −10mA
VCE= 5V, IC= −2mA
VCE= −5V, IE= 20mA, f=100MHz
VCB= −10V, f=1MHz
VCB= −30V
www.rohm.com
○c 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.11 - Rev.B
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BC857B.PDF ] | |
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