BC846ALT1 Datasheet PDF - Motorola Inc
Part Number | BC846ALT1 | |
Description | General Purpose Transistors | |
Manufacturers | Motorola Inc | |
Logo | ||
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846ALT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
BC847 BC848
Symbol BC846 BC850 BC849
Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current — Continuous
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CEO
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 µA, VEB = 0)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CES
Collector – Base Breakdown Voltage
(IC = 10 mA)
BC846A,B
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 1.0 mA)
BC846A,B
BC847A,B,C
V(BR)EBO
BC848A,B,C, BC849A,B,C, BC850A,B,C
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
ICBO
BC846ALT1,BLT1
BC847ALT1,
BLT1,CLT1 thru
BC850ALT1,BLT1,
CLT1
BC846, BC847 and BC848 are
Motorola Preferred Devices
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Typ Max Unit
65 — —
45 — —
30 — —
V
80 — —
50 — —
30 — —
V
80 — —
50 — —
30 — —
V
6.0 — —
6.0 — —
5.0 — —
V
— — 15 nA
— — 5.0 µA
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
|
|
BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad™. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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