|
|
Datasheet BC635 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BC635 | NPN Silicon Epitaxial Planar Transistor ST BC635 / BC637 / BC639
NPN Silicon Epitaxial Planar Transistor
Medium Power Transistors for driver stages of audio / video amplifiers
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage Collector Current Peak Collector Current Base | SEMTECH | transistor |
2 | BC635 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN BC636, 638, 640 PNP
TO-92 Plastic Package
For Lead Free Parts, Device Part # will be Prefixed with "T"
ECB
High Current Transistor
ABSOLUTE MAXIMUM | CDIL | transistor |
3 | BC635 | NPN Type Plastic Encapsulate Transistors Elektronische Bauelemente
BC635 / BC637 / BC639
NPN Type Plastic Encapsulated Transistor
FEATURE High current transistor
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-92
4.55±0.2
3.5±0.2
4.5±0.2
14.3±0.2
0.4 6+–00..11
0.43+–00..0078
(1.27 Typ). 123
1.25 | SeCoS | transistor |
4 | BC635 | High Current Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC635/D
High Current Transistors
NPN Silicon
COLLECTOR 2 3 BASE 1 EMITTER
BC635 BC637 BC639
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Tota | Motorola Inc | transistor |
5 | BC635 | NPN medium power transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC635; BC637; BC639 NPN medium power transistors
Product specification Supersedes data of 1997 Mar 12 1999 Apr 23
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES • High current (max. 1 A) • Low vo | NXP Semiconductors | transistor |
BC6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BC6130 | Fully Qualified Single-chip Bluetooth v2.1 + EDR system _`SNPM=nck Data Sheet
Features
■ Next generation, high-quality, low-cost, mono headset solution with extremely low-cost eBOM
■ World's longest talk time: up to 18 hours time from a small 120mAh battery
■ Proximity Pairing (heaset initiated pairing) ■ Advanced Multipoint ■ Programmable Aud CSR data | | |
2 | BC6145 | Fully Qualified Single-chip Bluetooth v3.0 System Features
■ ■ ■ ■ ■ ■ ■ ■ ■
■ ■ ■ ■ ■ ■ ■
■
6th generation 1-mic CVC audio enhancements A2DP v1.2 for high-quality mono music streaming Supports mSBC wideband speech codec Programmable audio prompts: available from either EEPROM or a low-cost SPI flash Bidirection CSR data | | |
3 | BC617 | DARLINGTON TRANSISTORS MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMA Motorola Semiconductors transistor | | |
4 | BC617 | NPN Silicon Darlington Transistors (High current gain High collector current) BC 617 BC 618
NPN Silicon Darlington Transistors
BC 617 BC 618
High current gain q High collector current
q
2 1 3
Type BC 617 BC 618
Marking –
Ordering Code Q62702-C1137 Q62702-C1138
Pin Configuration 1 2 3 C B E
Package1) TO-92
Maximum Ratings Parameter Collector-emitter voltage Collect Siemens Semiconductor Group transistor | | |
5 | BC618 | DARLINGTON TRANSISTORS MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMA Motorola Semiconductors transistor | | |
6 | BC618 | Darlington Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC618/D
Darlington Transistors
NPN Silicon
COLLECTOR 1 BASE 2
BC618
EMITTER 3
1 2 3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Devic Motorola Inc transistor | | |
7 | BC618 | Darlington Transistors(NPN Silicon)
BC618 Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 2 ON Semiconductor transistor | |
Esta página es del resultado de búsqueda del BC635. Si pulsa el resultado de búsqueda de BC635 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |