BC557B Datasheet PDF - ON Semiconductor
Part Number | BC557B | |
Description | Amplifier Transistors(PNP Silicon) | |
Manufacturers | ON Semiconductor | |
Logo | ||
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BC556B, BC557A, B, C,
BC558B, C
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
VCEO
Vdc
BC556
−65
BC557
−45
BC558
−30
Collector - Base Voltage
VCBO
Vdc
BC556
−80
BC557
−50
BC558
−30
Emitter - Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Peak
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
ICM
IBM
PD
−5.0
−100
−200
−200
625
5.0
Vdc
mAdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 2
1
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COLLECTOR
1
2
BASE
3
EMITTER
TO−92
CASE 29
1
2
STYLE 17
3
MARKING DIAGRAM
BC
55xx
AYWW G
G
BC55x = Device Code
x = 6, 7, or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BC556B/D
|
|
BC556B, BC557A, B, C, BC558B, C
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.05
0.01
0.1 0.2
0.5
SINGLE PULSE
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0 2.0
5.0 10
20 50
t, TIME (ms)
100
Figure 13. Thermal Response
200
ZqJC(t) = (t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
500 1.0 k 2.0 k
5.0 k 10
−200
−100
−50
−10
−5.0
−2.0
−1.0
1 s 3 ms
TA = 25°C TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
−5.0 −10
−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region − Safe Operating Area
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