Datasheet BC547B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BC547B	NPN GENERAL PURPOSE TRANSISTOR BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device:BC556,BC557,BC558 Series • Pb free product :99% Sn above can meet RoHS environment substanc	Pan Jit International	transistor
2	BC547B	NPN Silicon Amplifier Transistor MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150οC J	MCC	transistor
3	BC547B	NPN Transistor Small Signal Product NPN Transistor BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor FEATURES - For switching and AF amplifier applications - These types are subdivided into three groups A, B and C according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS c	Taiwan Semiconductor	transistor
4	BC547B	NPN general purpose transistors BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors Rev. 07 — 10 December 2008 Product data sheet 1. Product proﬁle 1.1 General description NPN general-purpose transistors in small plastic packages. Table 1. Product overview Type number[1] Package NXP BC847 SOT23 BC847A	NXP Semiconductors	transistor
5	BC547B	NPN General Purpose Amplifier BC547 / BC547A / BC547B / BC547C Discrete POWER & Signal Technologies BC547 BC547A BC547B BC547C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for	Fairchild Semiconductor	amplifier

BC5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BC501	DC / DC Converters DC/DC Converters International Power Sources, Inc. 260 Hopping Brook Road Holliston, Massachusetts 01746 Tel. (508) 429-4440 Fax (800) 226-2100 http://www.intlpower.com BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs FEATURES • Input π Filter • Fully Regulated Outputs • Industry Stan	XP Power	converter
2	BC516	PNP Darlington transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product speciﬁcation Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors PNP Darlington transistor Product speciﬁcation BC516 FEATURES • High current (max. 500 mA) • Low voltage (max.	NXP Semiconductors	transistor
3	BC516	PNP Silicon Darlington Transistor (High current gain High collector current) PNP Silicon Darlington Transistor q High current gain q High collector current q Complementary type: BC 517 (NPN) BC 516 2 3 1 Type BC 516 Marking – Ordering Code Q62702-C944 Pin Configuration 123 CBE Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage	Siemens Semiconductor Group	transistor
4	BC516	PNP Darlington Transistor BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VCEO VCBO VEBO IC PD TJ, TSTG Collector-Emitter V	Fairchild Semiconductor	transistor
5	BC516	COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR	Micro Electronics	transistor
6	BC517	Darlington Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon Order this document by BC517/D BC517 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continu	Motorola Inc	transistor
7	BC517	Darlington Transistors(NPN Silicon) BC517 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above	ON Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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