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PDF BC337 Data sheet ( Hoja de datos )
| Número de pieza | BC337 | |
| Descripción | Si-Epitaxial PlanarTransistors | |
| Fabricantes | Diotec Semiconductor | |
| Logotipo |  |
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 1. Amplifier Transistors - ON Semi  Hay una vista previa y un enlace de descarga de BC337 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BC337 / BC338
BC337 / BC338
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-05-30
Power dissipation
Verlustleistung
CBE
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E-B short
B open
C open
VCES
VCEO
VEBO
Ptot
IC
ICM
IB
Tj
TS
Grenzwerte (TA = 25°C)
BC337
BC338
50 V
30 V
45 V
25 V
5V
625 mW 1)
800 mA
1A
100 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 1 V, IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
VCE = 1 V, IC = 300 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
100 160 250
160 250 400
250 400 630
60 130
100 200
170 320
–
–
–
– – 0.7 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC337.PDF ] | |
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