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What is BF1211R?

This electronic component, produced by the manufacturer "ETC", performs the same function as "N-channel dual-gate MOS-FETs".


BF1211R Datasheet PDF - ETC

Part Number BF1211R
Description N-channel dual-gate MOS-FETs
Manufacturers ETC 
Logo ETC Logo 


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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1211; BF1211R; BF1211WR
N-channel dual-gate MOS-FETs
Product specification
2003 Dec 16

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BF1211R equivalent
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
25 30 40
input capacitance at gate 1 f = 1 MHz
2.1 2.6
input capacitance at gate 2 f = 1 MHz
1.1
output capacitance
f = 1 MHz
0.9
reverse transfer capacitance f = 1 MHz
15 30
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
3.5
f = 400 MHz; YS = YS (opt)
0.9 1.6
f = 800 MHz; YS = YS (opt)
1.3 2
power gain
f = 200 MHz; GS = 2 mS; BS = BS (opt);
GL = 0.5 mS; BL = BL (opt)
34
f = 400 MHz; GS = 2 mS; BS = BS (opt);
GL = 1 mS; BL = BL (opt)
29
f = 800 MHz; GS = 3.3 mS; BS = BS (opt);
GL = 1 mS; BL = BL (opt)
24
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 1
at 0 dB AGC
90
at 10 dB AGC
92
at 40 dB AGC
100 105
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Note
1. Measured in test circuit Fig.21.
2003 Dec 16
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BF1211R electronic component.


Information Total 15 Pages
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Download [ BF1211R.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
BF1211The function is N-channel dual-gate MOS-FETs. ETCETC
BF1211The function is N-channel dual-gate MOS-FETs. PhilipsPhilips
BF1211RThe function is N-channel dual-gate MOS-FETs. ETCETC

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